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脆[性断]裂 相关科技名词
- 空间电荷置限电流space-charge-limited current;SCLC
- 场效[应]管field effect transistor;FET
- 结型场效[应]管junction field effect transistor;JFET
- 场效应器件field effect device;FED
- MOS结构MOS structure
- MOS场效管MOS field effect transistor;MOS- FET
- MIS结构MIS structure
- 绝缘栅场效[应]管insulated-gate field effect tran- sistor;IGFET
- 双栅场效[应]管double-gate field effect transistor;double-gate FET
- 晶闸管thyristor
- 电荷转移器件charge transfer device;CTD
- 电荷注入器件charge injection device;CID
- 功率半导体器件power semiconductor device
- 光子器件photonic device
- 光电子器件optoelectronic device
- 磁敏器件magnetosensitive sensor
- 温度敏感器件temperature sensor
- 气敏器件gas sensing device;gas sensor
- 光敏器件photosensitive device
- 热敏器件thermosensitive device
- 集成电路integrated circuit;IC
- 大规模集成电路large scale integrated circuit;LSI
- 超大规模集成电路very large scale integrated circuit;VLSI
- 能带论[energy] band theory
- 电子能谱electronic energy spectrum
- 偶然简并性accidental degeneracy
- 玻恩-奥本海默近似Born-Oppenheimer approximation
- 独立电子近似independent electron approximation
- 布洛赫波函数Bloch wave function
- 玻恩-冯卡门边界条件Born-von Karman boundary condition
- 相容关系compatibility relation
- 布里渊区Brillouin zone
- 琼斯区Jones zone
- 元胞法cellular method
- LCAO法LCAO method
- 正交化平面波法orthogonalized plane wave method
- 紧束缚近似tight-binding approximation;TBA
- 正交紧束缚法orthogonalized tight-binding method
- 自由电子模型free-electron model
- KKR法KKR method;Korringa-Kohn- Rostoker method
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